HGT1S10N120BNST

Manufacturer Part	HGT1S10N120BNST
Manufacturer	onsemi
Description	IGBT 1200V 35A 298W TO263AB
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	35 A
Current - Collector Pulsed (Icm):	80 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 10A
Power - Max:	298 W
Switching Energy:	320µJ (on), 800µJ (off)
Input Type:	Standard
Gate Charge:	100 nC
Td (on/off) @ 25°C:	23ns/165ns
Test Condition:	960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;